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TYPICAL PERFORMANCE CURVES
APT30GN60BDQ2 APT30GN60BD_SDQ2(G) APT30GN60SDQ2 APT30GN60BDQ2(G) APT30GN60SDQ2(G) 600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.
(B)
TO -2 47
D3PAK
(S)
C G E
* 600V Field Stop
* * * * Trench Gate: Low VCE(on) Easy Paralleling 6s Short Circuit Capability 175C Rated
G
C
E
C G E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT30GN60BD_SDQ2(G) UNIT Volts
600 30 63 37 90 90A @ 600V 203 -55 to 175
Amps
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 430A, Tj = 25C) MIN TYP MAX Units
600 5.0 1.1 5.8 1.5 1.7 50
2
6.5 1.9
Volts
Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 30A, Tj = 125C)
I CES I GES RG(int)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2
A nA
7-2009 050-7617 Rev B
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor
TBD 300 N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT30GN60BD_SDQ2(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 300V I C = 30A TJ = 150C, R G = 4.3
7,
MIN
TYP
MAX
UNIT
1750 70 50 9.0 165 10 90
VGE = nC V pF
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area
15V, L = 100H,VCE = 600V VCC = 360V, VGE = 15V, TJ = 150C, R G = 4.3 7 Inductive Switching (25C) VCC = 400V VGE = 15V I C = 30A
90 6 12 14 155 55 525 565 700 12 14 180 75 555 950 895
A
Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
4 5
s
ns
RG = 4.3 7 TJ = +25C
Turn-on Switching Energy (With Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy
44 6
J
Inductive Switching (125C) VCC = 400V VGE = 15V I C = 30A RG = 4.3 7
55
ns
Turn-on Switching Energy (With Diode) Turn-off Switching Energy
66
TJ = +125C
J
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.74 .67 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and diode leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
Rev B 7-2009
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-7617
TYPICAL PERFORMANCE CURVES
90
V
GE
APT30GN60BD_SDQ2(G)
100 15V 13V 12V IC, COLLECTOR CURRENT (A) 80 11V 60 10V 40 9V 20 8V 0 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
= 15V
80 IC, COLLECTOR CURRENT (A) 70 60 TJ = 25C 50 40 30 20 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
TJ = -55C
TJ = 125C TJ = 175C
FIGURE 1, Output Characteristics(TJ = 25C) 90 80 IC, COLLECTOR CURRENT (A) 70 60 50 TJ = 175C 40 30 20 10 0 0 3 6 9 12 15 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
FIGURE 2, Output Characteristics (TJ = 125C) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 VCE = 300V 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 IC = 15A
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE I = 30A C T = 25C
J
TJ = -55C TJ = 25C TJ = 125C
VCE = 120V
VCE = 480V
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.0
2.5 2.0 IC = 30A 1.5 1.0 IC = 15A
IC = 60A
IC = 60A
IC = 30A
0.5 0
9 10 11 12 13 14 15 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.30
8
25 50 75 100 125 150 175 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 90
0
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
80 70 60 50 40 7-2009 050-7617 Rev B 30 20 10 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 -25
1.20
1.10
1.00
0 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
APT30GN60BD_SDQ2(G)
16 td(ON), TURN-ON DELAY TIME (ns) 14 VGE = 15V 12 10 8 6 4
VCE = 400V T = 25C, or =125C L = 100H
250 td (OFF), TURN-OFF DELAY TIME (ns)
200
150
VGE =15V,TJ=125C VGE =15V,TJ=25C
100
50
2 RJ = 4.3 G 0 10
20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 60
RG = 4.3, L = 100H, VCE = 400V
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100
RG = 4.3, L = 100H, VCE = 400V
0
VCE = 400V RG = 4.3 L = 100H
50 tr, RISE TIME (ns) tf, FALL TIME (ns)
80
TJ = 125C, VGE = 15V
40
60
TJ = 25C, VGE = 15V
30
40
20
TJ = 25 or 125C,VGE = 15V
10 0
20
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 3000 EON2, TURN ON ENERGY LOSS (J)
V = 400V CE V = +15V GE R = 4.3
G
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 1600 EOFF, TURN OFF ENERGY LOSS (J) 1400 1200 1000 800 600 400 200 10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 3000 SWITCHING ENERGY LOSSES (J)
V = 400V CE V = +15V GE R = 4.3
G
0
V = 400V CE V = +15V GE R = 4.3
G
TJ = 125C
2500
TJ = 125C
2000
1500
1000
TJ = 25C
500
TJ = 25C
10 20 30 40 50 60 70 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) 5000 4000
Eon2,60A Eoff,60A
V = 400V CE V = +15V GE T = 125C
J
0
0
2500
2000
Eon2,60A Eoff,60A
3000 2000
Eon2,30A
1500
Rev B 7-2009
1000
Eon2,30A Eoff,30A Eon2,15A Eoff,15A
1000 0
Eoff,30A Eon2,15A
Eoff,15A
500 0
050-7617
10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
3,000 IC, COLLECTOR CURRENT (A) Cies 100 90 80 70 60 50 40 30 20 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 10
APT30GN60BD_SDQ2(G)
1,000 C, CAPACITANCE ( F)
P
500
100 Coes 50 Cres
100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0
0.80 0.70 0.60 0.7 0.50 0.40 0.30 0.3 0.20 0.10 0 10-5 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 1.0 0.1 0.05 SINGLE PULSE 0.5
Note:
ZJC, THERMAL IMPEDANCE (C/W)
D = 0.9
PDM
t1 t2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
130 FMAX, OPERATING FREQUENCY (kHz)
50
10 5
T = 125C J T = 75C C D = 50 % = 400V V CE R = 4.3
G
F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf f max2 = Pdiss = Pdiss - P cond E on2 + E off TJ - T C R JC
10 15 20 25 30 35 40 45 50 55 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1
5
050-7617
Rev B
7-2009
APT30GN60BD_SDQ2(G)
APT40DQ60
10% td(on) tr 90%
Gate Voltage TJ = 125C
Collector Current
V CC
IC
V CE
5%
5% 10% Collector Voltage
A
Switching Energy
D.U.T.
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off) 90% Collector Voltage tf 10%
TJ = 125C
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
050-7617
Rev B 7-2009
TYPICAL PERFORMANCE CURVES
APT30GN60BD_SDQ2(G)
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF (AV) IF (RMS) IFSM Characteristic / Test Conditions Maximum Average Forward Current (TC = 111C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms)
All Ratings: TC = 25C unless otherwise specified.
APT30GN60BD_SDQ2(G) UNIT
40 63 320
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C MIN TYP MAX UNIT
1.85 2.27 1.5
MIN TYP MAX UNIT ns Volts
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.5 0.30 0.20 0.10 0 10-5 0.3
Note:
22 25 35 3 160 480 6 85 920 20 -
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 25C
-
nC Amps ns nC Amps ns nC Amps
IF = 40A, diF/dt = -200A/s VR = 400V, TC = 125C
-
IF = 40A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
D = 0.9
0.7
PDM
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 24. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 7-2009 050-7617 Rev B
APT30GN60BD_SDQ2(G)
120 trr, REVERSE RECOVERY TIME (ns) 100 80 60 TJ = 125C 40 20 0 TJ = 175C TJ = 25C TJ = -55C 0.5 1 1.5 2 2.5 3 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 25. Forward Current vs. Forward Voltage 1400 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
180 160 140 40A 120 80A
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
20A 100 80 60 40 20
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 26. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
1200 80A 1000 800 600 400 20A 200 0
80A
20
15
40A
10 20A 5
40A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 27. Reverse Recovery Charge vs. Current Rate of Change 1.4 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.2 1.0 IRRM 0.8 0.6 trr 0.4 0.2 0.0 Qrr trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Current vs. Current Rate of Change 80 70 60 IF(AV) (A) 50 40 30 20 10
Duty cycle = 0.5 T = 175C
J
0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 29. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 30. Maximum Average Forward Current vs. CaseTemperature
0
25
50
050-7617
Rev B 7-2009
TYPICAL PERFORMANCE CURVES
Vr +18V 0V D.U.T. 30H diF /dt Adjust
APT40GT60BR
APT30GN60BD_SDQ2(G)
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 32. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 33, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
Collector (Cathode) (Heat Sink)
D PAK Package Outline
e3 SAC: Tin, Silver, Copper
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532)
3
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Gate Collector (Cathode) Emitter (Anode)
Heat Sink (Collector) and Leads are Plated
Dimensions in Millimeters and (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7617
Rev B
7-2009
2.21 (.087) 2.59 (.102)
5.45 (.215) BSC 2-Plcs.
Emitter (Anode) Collector (Cathode) Gate Dimensions in Millimeters (Inches)

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